Patent · US Active

Gallium nitride device with a diamond layer

US8174024B2 · kind B2 · utility

2Cited by

11References

10Claims

0Family size

Assignee

Raytheon Company · US

Inventors

Ralph Korenstein · Framingham, US
Steven D. Bernstein · Watertown, US
Stephen J. Pereira · Hopedale, US

Key dates

Filing date	Jun 10, 2011
Grant date	May 8, 2012
Priority date	—
Expiry date	Jun 10, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/8503
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In one aspect, a device includes a gallium nitride (GaN) layer, a first diamond layer disposed on the GaN layer, a gate structure disposed in contact with the GaN layer and the first diamond layer, and a second diamond layer having a first thermal conductivity and disposed on a second surface of the GaN layer. The gate and the first diamond layer are disposed on a first surface of the GaN layer opposite the second surface of the GaN layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.