High voltage LDMOS transistor
US8174071B2 · kind B2 · utility
23Cited by
24References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 2, 2008 |
| Grant date | May 8, 2012 |
| Priority date | — |
| Expiry date | Jan 10, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/85
Abstract
An LDMOS transistor structure and methods of making the same are provided. The structure includes a gate electrode extended on an upper boundary of an extension dielectric region that separates the gate electrode from the drain region of the LDMOS transistor. Moreover, at an area close to an edge of the extended gate electrode portion, the gate electrode further projects downwards into a convex-shaped recess or groove in the upper boundary of the extension dielectric region, forming a tongue. LDMOS transistors with this structure may provide improved suppression of hot carrier effects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.