Integrated circuit structures with multiple FinFETs

US8174073B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Tsung-Lin Lee · Hsinchu, TW
• Chang-Yun Chang · Taipei, TW
• Sheng-Da Liu · Cupertino, US
• Fu-Liang Yang · Baoshan, TW

Key dates

• Filing date: May 30, 2007
• Grant date: May 8, 2012
• Expiry date: Jun 6, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/215

Abstract

A semiconductor structure includes a semiconductor substrate; and a first Fin field-effect transistor (FinFET) and a second FinFET at a surface of the semiconductor substrate. The first FinFET includes a first fin; and a first gate electrode over a top surface and sidewalls of the first fin. The second FinFET includes a second fin spaced apart from the first fin by a fin space; and a second gate electrode over a top surface and sidewalls of the second fin. The second gate electrode is electrically disconnected from the first gate electrode. The first and the second gate electrodes have a gate height greater than about one half of the fin space.