Solid state imaging device
US8174088B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 19, 2010 |
| Grant date | May 8, 2012 |
| Priority date | — |
| Expiry date | Oct 15, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/802
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Storage capacitors Ctd and Cts are provided alternately side by side sequentially in a row direction. Each of the storage capacitors Ctd and Cts has an electrode layer 21 constituting a signal electrode and an upper side electrode layer 23 and a lower side electrode layer 28 constituting a fixed potential electrode. The signal electrodes of the respective storage capacitors Ctd and Cts are electrically independent of each other. The fixed potential electrodes of the respective storage capacitors Ctd and Cts are electrically connected to each other and connected to the ground etc. Contact holes 26a and 26b that connect the electrode layers 23 and 28 are provided between the electrode layers 21 of the neighboring storage capacitors Ctd and Cts so as to occupy 52% or more of the opposed area of the second electrode sections of two neighboring storage capacitors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.