Integrated circuit device with low capacitance and high thermal conductivity interface
US8174112B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 20, 2009 |
| Grant date | May 8, 2012 |
| Priority date | — |
| Expiry date | Jan 6, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15311
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit device includes an integrated circuit formed in a semiconductor die and an integrated circuit package containing the semiconductor die. The integrated circuit package includes a thermal interface material substantially between the semiconductor die and a heat spreader of the integrated circuit device for conducting heat from the semiconductor die to the heat spreader. The thermal interface material includes diamond particles and has a thickness selected to reduce capacitance between the semiconductor die and the heat spreader over that of a conventional integrated circuit device without reducing the rate of thermal conduction from the semiconductor die to the heat spreader. As a result, the integrated circuit device has improved electrostatic discharge immunity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.