Patent · US Active

Dummy pattern in wafer backside routing

US8174124B2 · kind B2 · utility

31Cited by
41References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 8, 2010
Grant dateMay 8, 2012
Priority date
Expiry dateAug 27, 2030

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/14
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A device includes a semiconductor substrate including a front side and a backside. A through-substrate via (TSV) penetrates the semiconductor substrate. A dummy metal line is formed on the backside of the semiconductor substrate, and may be connected to the dummy TSV.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.