Semiconductor device having a filled trench structure and methods for fabricating the same

US8174131B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Zhen Zhang · Ossining, US
• Frank Kuechenmeister · Dresden, DE
• Jaime Bravo · Santiago, CL
• Michael Z. Su · Round Rock, US
• Ranjit Gannamani · Santa Clara, US
• Kevin Lim · Seattle, US

Key dates

• Filing date: May 27, 2009
• Grant date: May 8, 2012
• Expiry date: May 27, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2224/73203
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods are provided for packaging a semiconductor die having a first surface. In accordance with an exemplary embodiment, a method comprises the steps of forming a trench in the first surface of the die, electrically and physically coupling the die to a packaging substrate, forming a sealant layer on the first surface of the die, forming an engagement structure within the trench, and infusing underfill between the sealant layer and the engagement structure and the packaging substrate.