Memory devices including multi-bit memory cells having magnetic and resistive memory elements and related methods
US8174875B2 · kind B2 · utility
10Cited by
17References
13Claims
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Key dates
| Filing date | Apr 21, 2011 |
| Grant date | May 8, 2012 |
| Priority date | — |
| Expiry date | Apr 21, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/935
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An integrated circuit memory device may include an integrated circuit substrate, and a multi-bit memory cell on the integrated circuit substrate. The multi-bit memory cell may be configured to store a first bit of data by changing a first characteristic of the multi-bit memory cell and to store a second bit of data by changing a second characteristic of the multi-bit memory cell. Moreover, the first and second characteristics may be different. Related methods are also discussed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.