Patent · US Active

Program method of flash memory device

US8174894B2 · kind B2 · utility

2Cited by
2References
8Claims
0Family size

Assignee

Inventor

Key dates

Filing dateJun 29, 2009
Grant dateMay 8, 2012
Priority date
Expiry dateNov 13, 2029

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C2216/14
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A program method of a flash memory device includes inputting a first data and a second data to a page buffer coupled to memory cells including an even page and an odd page, pre-programming a first memory cell of the odd page using the first data, programming a second memory cell of the even page using the second data, and programming the pre-programmed first memory cell using the first data.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.