Method for manufacturing liquid discharge head
US8177988B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 3, 2008 |
| Grant date | May 15, 2012 |
| Priority date | — |
| Expiry date | Jan 30, 2031 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB41J2/1639
- WIPO fieldTextile and paper machines
- WIPO sectorMechanical engineering
Abstract
A method for manufacturing a substrate for a liquid discharge head having a silicon substrate provided with a supply port of a liquid comprises steps of preparing a substrate which is provided with a passive film on one side face thereof, has a first recess and a second recess provided therein so as to penetrate from the one side face into the inner part through the passive film, wherein the recesses satisfy a relation of a ×tan 54.7 degrees≦d, where a is defined as a distance between the first recess and the second recess, and d is defined as a depth of the second recess, and forming the supply port by anisotropically etching the crystal from the one side face.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.