System and method for photolithography in semiconductor manufacturing
US8178289B2 · kind B2 · utility
1Cited by
4References
8Claims
0Family size
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Key dates
| Filing date | Jan 29, 2009 |
| Grant date | May 15, 2012 |
| Priority date | — |
| Expiry date | Jan 29, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70466
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for producing a pattern on a substrate includes providing at least one exposure of the pattern onto a layer of the substrate by a higher-precision lithography mechanism and providing at least one exposure of the pattern onto a layer of the substrate by a lower-precision lithography mechanism. The exposures can be done in either order, and additional exposures can be included. The higher-precision lithography mechanism can be immersion lithography and the lower-precision lithography mechanism can be dry lithography.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.