Integrated circuit, resistivity changing memory device, memory module, and method of fabricating an integrated circuit

US8178379B2 · kind B2 · utility

Assignees

• Qimonda AG · DE
• Altis Semiconductor, SNC · FR

Inventors

• Philippe Blanchard · Saint-Fargeau-Ponthierry, FR
• Gill Yong Lee · San Jose, US

Key dates

• Filing date: Apr 13, 2007
• Grant date: May 15, 2012
• Expiry date: Jan 24, 2029

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T29/49117

Abstract

According to one embodiment of the present invention, a memory device includes a composite structure including a resistivity changing layer and an electrode layer being arranged on or above the resistivity changing layer. The resistivity changing memory device further includes a protection layer being arranged on or above the composite structure, the protection layer protecting the electrode layer against electromagnetic waves.