Production method for semiconductor device
US8178399B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 20, 2012 |
| Grant date | May 15, 2012 |
| Priority date | — |
| Expiry date | Jan 20, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6735
Abstract
An SGT production method includes forming a pillar-shaped first-conductive-type semiconductor layer and forming a second-conductive-type semiconductor layer underneath the first-conductive-type semiconductor layer. A dummy gate dielectric film and a dummy gate electrode are formed around the first-conductive-type semiconductor layer and a first dielectric film is formed on an upper region of a sidewall of the first-conductive-type semiconductor layer in contact with a top of the gate electrode. A first dielectric film is formed on a sidewall of the gate electrode and a second-conductive-type semiconductor layer is formed in an upper portion of the first-conductive-type semiconductor layer. A second-conductive-type semiconductor layer is formed in an upper portion of the first-conductive-type semiconductor layer and a metal-semiconductor compound is formed on each of the second-conductive-type semiconductor layers. The dummy gate dielectric film and the dummy gate electrode are removed and a high-k gate dielectric film and a metal gate electrode are formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.