Method of fabricating light-emitting apparatus with improved light extraction efficiency and light-emitting apparatus fabricated using the method
US8178424B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 10, 2009 |
| Grant date | May 15, 2012 |
| Priority date | — |
| Expiry date | Nov 10, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/01
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are a method of fabricating a light-emitting apparatus with improved light extraction efficiency and a light-emitting apparatus fabricated using the method. The method includes: preparing a monocrystalline substrate; forming an intermediate structure on the substrate, the intermediate structure comprising a light-emitting structure which comprises a first conductive pattern of a first conductivity type, a light-emitting pattern, and a second conductive pattern of a second conductivity type stacked sequentially, a first electrode which is electrically connected to the first conductive pattern, and a second electrode which is electrically connected to the second conductive pattern; forming a polycrystalline region, which extends in a horizontal direction, by irradiating a laser beam to the substrate in the horizontal direction such that the laser beam is focused on a beam-focusing point within the substrate; and cutting the substrate in the horizontal direction along the polycrystalline region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.