Manufacturing method of semiconductor device and substrate processing apparatus
US8178428B2 · kind B2 · utility
3Cited by
1References
20Claims
0Family size
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Key dates
| Filing date | Jan 28, 2010 |
| Grant date | May 15, 2012 |
| Priority date | — |
| Expiry date | Jan 28, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02579
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A manufacturing method of a semiconductor device is provided, comprising: loading a substrate into a processing chamber; forming a first film on the substrate by supplying silicon atom-containing gas, boron atom-containing gas, and germanium atom-containing gas into the processing chamber; forming a second film on the first film by supplying the silicon atom-containing gas and the boron atom-containing gas into the processing chamber; and unloading the substrate from the processing chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.