N-type carrier enhancement in semiconductors
US8178430B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 8, 2009 |
| Grant date | May 15, 2012 |
| Priority date | — |
| Expiry date | Apr 29, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/919
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for generating n-type carriers in a semiconductor is disclosed. The method includes supplying a semiconductor having an atomic radius. Implanting an n-type dopant species into the semiconductor, which n-type dopant species has a dopant atomic radius. Implanting a compensating species into the semiconductor, which compensating species has a compensating atomic radius. Selecting the n-type dopant species and the compensating species in such manner that the size of the semiconductor atomic radius is inbetween the dopant atomic radius and the compensating atomic radius. A further method is disclosed for generating n-type carriers in germanium (Ge). The method includes setting a target concentration for the carriers, implanting a dose of an n-type dopant species into the Ge, and selecting the dose to correspond to a fraction of the target carrier concentration. Thermal annealing the Ge in such manner as to activate the n-type dopant species and to repair a least a portion of the implantation damage. Repeating the implantation and the thermal annealing until the target n-type carrier concentration has been reached.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.