Methods for the formation of fully silicided metal gates
US8178433B2 · kind B2 · utility
1Cited by
7References
12Claims
0Family size
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Key dates
| Filing date | Oct 7, 2008 |
| Grant date | May 15, 2012 |
| Priority date | — |
| Expiry date | Aug 8, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/60
Abstract
An advanced gate structure that includes a fully silicided metal gate and silicided source and drain regions in which the fully silicided metal gate has a thickness that is greater than the thickness of the silicided source/drain regions is provided. Methods of forming the advanced gate structure are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.