Adhesion and electromigration performance at an interface between a dielectric and metal
US8178436B2 · kind B2 · utility
446Cited by
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14Claims
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Key dates
| Filing date | Dec 21, 2006 |
| Grant date | May 15, 2012 |
| Priority date | — |
| Expiry date | Dec 21, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Interconnect structures having improved adhesion and electromigration performance and methods to fabricate thereof are described. A tensile capping layer is formed on a first conductive layer on a substrate. A compressive capping layer is formed on the tensile capping layer. Next, an interlayer dielectric layer is formed on the compressive capping layer. Further, a first opening is formed in the ILD layer using a first chemistry. A second opening is formed in the tensile capping layer and the compressive capping layer using a second chemistry. Next, a second conductive layer is formed in the first opening and the second opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.