Substrate processing method and substrate processing apparatus
US8178444B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 2, 2009 |
| Grant date | May 15, 2012 |
| Priority date | — |
| Expiry date | Aug 20, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6831
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A substrate processing method that can eliminate unevenness in the distribution of plasma. The method is for a substrate processing apparatus that has a processing chamber in which a substrate is housed, a mounting stage that is disposed in the processing chamber and on which the substrate is mounted, and an electrode plate that is disposed in the processing chamber such as to face the mounting stage, the electrode plate being made of silicon and connected to a radio-frequency power source, and carries out plasma processing on the substrate. In the plasma processing, the temperature of the electrode plate is measured, and based on the measured temperature, the temperature of the electrode plate is maintained lower than a critical temperature at which the specific resistance value of the silicon starts changing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.