Laser chalcogenide phase change device
US8178906B2 · kind B2 · utility
0Cited by
14References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 11, 2008 |
| Grant date | May 15, 2012 |
| Priority date | — |
| Expiry date | Jan 11, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A laser activated phase change device for use in an integrated circuit comprises a chalcogenide fuse configured to connect a first patterned metal line and a second patterned metal line and positioned between an inter layer dielectric and an over fuse dielectric. The fuse interconnects active semiconductor elements manufactured on a substrate. A method for activating the laser activated phase change device includes selecting a laser condition of a laser based on characteristics of the fuse and programming a phase-change of the fuse with the laser by direct photon absorption until a threshold transition temperature is met.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.