Wafer level package with die receiving through-hole and method of the same
US8178963B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 3, 2007 |
| Grant date | May 15, 2012 |
| Priority date | — |
| Expiry date | May 27, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/351
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention discloses a structure of package comprising: a substrate with a die receiving through hole, a connecting through hole structure and a first contact pad; a die disposed within the die receiving through hole; a surrounding material formed under the die and filled in the gap between the die and sidewall of the die receiving though hole; a dielectric layer formed on the die and the substrate; a re-distribution layer (RDL) formed on the dielectric layer and coupled to the first contact pad; a protection layer formed over the RDL; and a second contact pad formed at the lower surface of the substrate and under the connecting through hole structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.