IC device having low resistance TSV comprising ground connection
US8178976B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 8, 2009 |
| Grant date | May 15, 2012 |
| Priority date | — |
| Expiry date | Jan 28, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30107
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes an integrated circuit (IC) die including a substrate, and at least one through substrate via (TSV) that extends through the substrate to a protruding integral tip that includes sidewalls and a distal end. The protruding integral tip has a tip height between 1 and 50 μm. A metal layer is on the bottom surface of the IC die, and the sidewalls and the distal end of the protruding integral tips. A semiconductor device can include an IC die that includes TSVs and a package substrate such as a lead-frame, where the IC die includes a metal layer and an electrically conductive die attach adhesive layer, such as a solder filled polymer wherein the solder is arranged in an electrically interconnected network, between the metal layer and the die pad of the lead-frame.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.