Semiconductor devices with improved local matching and end resistance of RX based resistors

US8183107B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Kaveri Mathur · Austin, US
• James F. Buller · Austin, US
• Andreas Kurz · Oberursel, DE

Key dates

• Filing date: May 27, 2009
• Grant date: May 22, 2012
• Expiry date: Apr 9, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/817

Abstract

Semiconductor devices are formed with reduced variability between close proximity resistors, improved end resistances, and reduced random dopant mismatch. Embodiments include ion implanting a dopant, such as B, at a relatively high dosage, e.g. about 4 to about 6 keV, and at a relatively low implant energy, e.g., about 1.5 to about 2E15/cm2.