Glass flux assisted sintering of chemical solution deposited thin dielectric films
US8183108B2 · kind B2 · utility
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Key dates
| Filing date | Jun 15, 2006 |
| Grant date | May 22, 2012 |
| Priority date | — |
| Expiry date | Oct 26, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2201/0355
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of making dense dielectrics layers via chemical solution deposition by adding inorganic glass fluxed material to high dielectric constant compositions, depositing the resultant mixture onto a substrate and annealing the substrate at temperatures between the softening point of the inorganic glass flux and the melting point of the substrate. A method of making a capacitor comprising a dense dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.