Patent · US Active

Method of etching a material surface

US8183156B2 · kind B2 · utility

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1References

18Claims

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Assignee

Infineon Technologies AG · DE

Inventors

Maria Heidenblut · Schwarzenfeld, DE
Raimund Foerg · Straubing, DE
Walter Preis · Regensburg, DE

Key dates

Filing date	Jun 6, 2008
Grant date	May 22, 2012
Priority date	—
Expiry date	Mar 23, 2031

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S438/906
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Disclosed is a method of structuring a material surface by dry etching, so that a passivation layer soluble in a solvent forms by the dry etching on parts of the structured material surface, sealing the passivation layer with a substance soluble in the solvent, and removing the sealed passivation layer and the substance by means of the solvent.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.