Method for manufacturing a semiconductor device and semiconductor device obtainable with such a method
US8183160B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Oct 9, 2007 |
| Grant date | May 22, 2012 |
| Priority date | — |
| Expiry date | May 25, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76811
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device includes providing a patterned hard-mask layer. The hard-mask layer is provided on an exposed surface of one or more layers to be patterned of a semiconductor intermediate product. The hard-mask layer covers the exposed surface in covered areas of the one or more layers to be patterned and does not cover the exposed surface in bared areas of the one or more layers to be patterned. One or more recesses are formed in the layers to be patterned by at least partially removing the layers to be patterned in the bared areas. The hard-mask layer is ten removed. After removing the hard-mask layer the recess is filled with a filling material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.