Peroxide activated oxometalate based formulations for removal of etch residue
US8183195B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 28, 2008 |
| Grant date | May 22, 2012 |
| Priority date | — |
| Expiry date | Jun 15, 2029 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/22
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Highly alkaline, aqueous formulations including (a) water, (b) at least one metal ion-free base at sufficient amounts to produce a final formulation alkaline pH, (c) from about 0.01% to about 5% by weight (expressed as % SiO2) of at least one water-soluble metal ion-free silicate corrosion inhibitors; (d) from about 0.01% to about 10% by weight of at least one metal chelating agent, and (e) from more than 0 to about 2.0% by weight of at least one oxymetalate are provided in accordance with this invention. Such formulations are combined with a peroxide such that a peroxymetalate is formed to produce form a microelectronic cleaning composition. Used to remove contaminants and residue from microelectronic devices, such as microelectronic substrates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.