(Al,In,Ga,B)N device structures on a patterned substrate

US8183557B2 · kind B2 · utility

Assignee

• The Regents of the University of California · US

Inventors

• Michael Iza · Goleta, US
• Hitoshi Sato · Kawasaki, JP
• Eu Jin Hwang · Siheung-si, KR
• Steven P. DenBaars · Goleta, US
• Shuji Nakamura · Goleta, US

Key dates

• Filing date: Sep 19, 2008
• Grant date: May 22, 2012
• Expiry date: May 13, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/825

Abstract

A nitride light emitting diode, on a patterned substrate, comprising a nitride interlayer having at least two periods of alternating layers of InxGa1−xN and InyGa1−yN where 0<x<1 and 0≦y<1, and a nitride based active region having at least one quantum well structure on the nitride interlayer.