LED with upstanding nanowire structure and method of producing such
US8183587B2 · kind B2 · utility
30Cited by
31References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 15, 2007 |
| Grant date | May 22, 2012 |
| Priority date | — |
| Expiry date | Mar 12, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/856
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present invention relates to light emitting diodes, LEDs. In particular the invention relates to a LED comprising a nanowire as an active component. The nanostructured LED according to the embodiments of the invention comprises a substrate and at an upstanding nanowire protruding from the substrate. A pn-junction giving an active region to produce light is present within the structure. The nanowire, or at least a part of the nanowire, forms a wave-guiding section directing at least a portion of the light produced in the active region in a direction given by the nanowire.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.