Solid-state imaging device for inhibiting dark current

US8183603B2 · kind B2 · utility

Assignee

• SONY GROUP CORPORATION · JP

Inventors

• Tetsuji Yamaguchi · Yokohama, JP
• Yasushi Maruyama · Yokohama, JP
• Takashi Ando · Tuckahoe, US
• Susumu Hiyama · Yokohama, JP
• Yuko Ohgishi · Tokyo, JP

Key dates

• Filing date: Feb 22, 2007
• Grant date: May 22, 2012
• Expiry date: Mar 15, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F77/247

Abstract

A solid-state imaging device includes a substrate having a first surface and a second surface, light being incident on the second surface side; a wiring layer disposed on the first surface side; a photodetector formed in the substrate and including a first region of a first conductivity type; a transfer gate disposed on the first surface of the substrate and adjacent to the photodetector, the transfer gate transferring a signal charge accumulated in the photodetector; and at least one control gate disposed on the first surface of the substrate and superposed on the photodetector, the control gate controlling the potential of the photodetector in the vicinity of the first surface.