Radical-enhanced atomic layer deposition system and method
US8187679B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 26, 2007 |
| Grant date | May 29, 2012 |
| Priority date | — |
| Expiry date | Aug 8, 2029 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/545
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A radical-enhanced atomic layer deposition (REALD) system and method involves moving a substrate along a circulating or reciprocating transport path between zones that provide alternating exposure to a precursor gas and a gaseous radical species. The radical species may be generated in-situ within a reaction chamber by an excitation source such as plasma generator or ultraviolet radiation (UV), for example. The gaseous radical species is maintained in a radicals zone within the reaction chamber while a precursor gas is introduced into a precursor zone. The precursor zone is spaced apart from the radicals zone to define a radical deactivation zone therebetween. Purge gas flowing through the various zones may provide flow and pressure conditions that substantially prevent the precursor gas from flowing into the radicals zone. In some embodiments, the system includes a partition having one or more flow-restricting passageways though which the substrate is transported.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.