Backside illuminated image sensor having deep light reflective trenches
US8187909B2 · kind B2 · utility
5Cited by
3References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 10, 2010 |
| Grant date | May 29, 2012 |
| Priority date | — |
| Expiry date | Jan 18, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/199
Abstract
An array of pixels is formed using a semiconductor layer having a frontside and a backside through which incident light is received. Each pixel typically includes a photosensitive region formed in the semiconductor layer and a trench formed adjacent to the photosensitive region. The trench causes the incident light to be directed away from the trench and towards the photosensitive region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.