Method to alter silicide properties using GCIB treatment
US8187971B2 · kind B2 · utility
21Cited by
4References
21Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 1, 2010 |
| Grant date | May 29, 2012 |
| Priority date | — |
| Expiry date | Jan 20, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3165
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device is described. The method comprises performing a gas cluster ion beam (GCIB) pre-treatment and/or post-treatment of at least a portion of a silicon-containing substrate during formation of a silicide region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.