Workpiece patterning with plasma sheath modulation
US8187979B2 · kind B2 · utility
3Cited by
2References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 23, 2009 |
| Grant date | May 29, 2012 |
| Priority date | — |
| Expiry date | Sep 27, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods to texture or fabricate workpieces are disclosed. The workpiece may be, for example, a solar cell. This texturing may involve etching or localized sputtering using a plasma where a shape of a boundary between the plasma and the plasma sheath is modified with an insulating modifier. The workpiece may be rotated in between etching or sputtering steps to form pyramids. Regions of the workpiece also may be etched or sputtered with ions formed from a plasma adjusted by an insulating modifier and doped. A metal layer may be formed on these doped regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.