Thermionic electron emitters/collectors have a doped diamond layer with variable doping concentrations
US8188456B2 · kind B2 · utility
10Cited by
3References
47Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 12, 2008 |
| Grant date | May 29, 2012 |
| Priority date | — |
| Expiry date | Nov 30, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J45/00
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A thermionic electron emitter/collector includes a substrate and a doped diamond electron emitter/collector layer on the substrate. The doped diamond electron emitter/collector layer has at least a first and a second doping concentration as a function of depth such that the first doping concentration is different from the second doping concentration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.