Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices

US8188458B2 · kind B2 · utility

Assignee

• The Regents of the University of California · US

Inventors

• Michael D. Craven · Goleta, US
• Stacia Keller · Midland School, US
• Steven P. DenBaars · Goleta, US
• Tal Margalith · Lompoc, US
• James S. Speck · Fremont, US
• Shuji Nakamura · Goleta, US
• Umesh Mishra · Montecito, US

Key dates

• Filing date: May 3, 2011
• Grant date: May 29, 2012
• Expiry date: May 3, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02647
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices. Non-polar (11 20) a-plane GaN layers are grown on an r-plane (1 102) sapphire substrate using MOCVD. These non-polar (11 20) a-plane GaN layers comprise templates for producing non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices.