Michael D. Craven
13Patents
5h-index
14Co-inventors
59Inventor score
Filing activity: Apr 15, 2003 → Mar 29, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6900070B2 | Dislocation reduction in non-polar gallium nitride thin films | Electricity | 94 | Expired |
| US7220658B2 | Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy | Electricity | 71 | Expired |
| US7091514B2 | Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices | Electricity | 39 | Expired |
| US8052738B2 | Intraluminal flexible stent device | Human Necessities | 32 | Active |
| US7847293B2 | Growth of reduced dislocation density non-polar gallium nitride | Electricity | 5 | Active |
| US7427555B2 | Growth of planar, non-polar gallium nitride by hydride vapor phase epitaxy | Electricity | 4 | Expired |
| US8188458B2 | Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices | Electricity | 3 | Active |
| US9039834B2 | Non-polar gallium nitride thin films grown by metalorganic chemical vapor deposition | Electricity | 1 | Active |
| US7982208B2 | Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices | Electricity | 1 | Active |
| US12224344B2 | Method and system for control of sidewall orientation in vertical gallium nitride field effect transistors | Electricity | 0 | Active |
| US8450192B2 | Growth of planar, non-polar, group-III nitride films | Electricity | 0 | Active |
| US8809867B2 | Dislocation reduction in non-polar III-nitride thin films | Electricity | 0 | Active |
| US9893236B2 | Non-polar (Al,B,In,Ga)N quantum wells | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.