SiC semiconductor device with self-aligned contacts, integrated circuit and manufacturing method

US8188482B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Michael Treu · Villach, AT
• Kathrin Rueschenschmidt · Villach, AT
• Oliver Haeberlen · Villach, AT
• Franz Auerbach · Soest, DE

Key dates

• Filing date: Dec 22, 2008
• Grant date: May 29, 2012
• Expiry date: Apr 11, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/343

Abstract

One aspect includes a semiconductor device with self-aligned contacts, integrated circuit and manufacturing method. One embodiment provides gate control structures. Each of the gate control structures is configured to control the conductivity of a channel region within a silicon carbide substrate by field effect. A contact hole is self-aligned to opposing sidewalls of adjacent gate control structures by intermediate spacers.