Semiconductor device and production method therefor
US8188537B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 12, 2010 |
| Grant date | May 29, 2012 |
| Priority date | — |
| Expiry date | Sep 17, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
Abstract
It is intended to provide a semiconductor device including a MOS transistor, comprising: a semiconductor pillar; one of a drain region and a source region formed in contact with a lower part of the semiconductor pillar; a first gate formed around a sidewall of the semiconductor pillar through a first dielectric film therebetween; and an epitaxial semiconductor layer formed on a top surface of the semiconductor pillar, wherein the other of the source region and the drain region is formed so as to be at least partially in the epitaxial semiconductor layer, and wherein: the other of the source region and the drain region has a top surface having an area greater than that of the top surface of the semiconductor pillar.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.