Field-effect semiconductor device and method of forming the same
US8188539B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 10, 2005 |
| Grant date | May 29, 2012 |
| Priority date | — |
| Expiry date | Nov 26, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/307
Abstract
A semiconductor device comprises a semiconductor layer, a body region of a first conductivity type formed in the semiconductor layer and extending from a first surface of the semiconductor layer, a first region of a second conductivity type formed in the body region, and a second region of the first conductivity type formed in the body region. The first region extends from the first surface of the semiconductor layer and provides a current electrode region of the semiconductor device. The second region surrounds the first region. The doping concentration of the first conductivity type in the second region is greater than a doping concentration of the first conductivity type in the body region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.