Semiconductor device with complementary transistors that include hafnium-containing gate insulators and metal gate electrodes
US8188547B2 · kind B2 · utility
9Cited by
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18Claims
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Key dates
| Filing date | Jun 21, 2010 |
| Grant date | May 29, 2012 |
| Priority date | — |
| Expiry date | Dec 4, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0177
Abstract
A first adjusting metal, capable of varying the threshold voltage of a first-conductivity-type transistor of a complementary transistor, is added to the first-conductivity-type transistor and a second-conductivity-type transistor at the same time, and a diffusion suppressive element, capable of suppressing diffusion of the first adjusting metal, is added from above a metal gate electrode of the second-conductivity-type transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.