Semiconductor device and method of fabricating the same
US8188600B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 24, 2005 |
| Grant date | May 29, 2012 |
| Priority date | — |
| Expiry date | Jan 8, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76873
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a semiconductor device which is capable of enhancing adhesion at an interface between a wire-protection film and copper, suppressing dispersion of copper at the interface to avoid electromigration and stress-inducing voids, and having a highly reliable wire. An interlayer insulating film, and a first etching-stopper film are formed on a semiconductor substrate on which a semiconductor device is fabricated. A first alloy-wire covered with a first barrier metal film is formed on the first etching-stopper film by a damascene process. The first alloy-wire is covered at an upper surface thereof with a first wire-protection film. The first wire-protection film covering an upper surface of the first alloy-wire contains at least one metal among metals contained in the first alloy-wire.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.