Magnetic field sensor with graphene sense layer and ferromagnetic biasing layer below the sense layer
US8189302B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 11, 2010 |
| Grant date | May 29, 2012 |
| Priority date | — |
| Expiry date | Sep 16, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/3993
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A graphene magnetic field sensor has a ferromagnetic biasing layer located beneath and in close proximity to the graphene sense layer. The sensor includes a suitable substrate, the ferromagnetic biasing layer, the graphene sense layer, and an electrically insulating underlayer between the ferromagnetic biasing layer and the graphene sense layer. The underlayer may be a hexagonal boron-nitride (h-BN) layer, and the sensor may include a seed layer to facilitate the growth of the h-BN underlayer. The ferromagnetic biasing layer has perpendicular magnetic anisotropy with its magnetic moment oriented substantially perpendicular to the plane of the layer. The graphene magnetic field sensor based on the extraordinary magnetoresistance (EMR) effect may function as the magnetoresistive read head in a magnetic recording disk drive.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.