Patent · US Active

MEMS process method for high aspect ratio structures

US8193005B1 · kind B1 · utility

1Cited by
4References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 13, 2010
Grant dateJun 5, 2012
Priority date—
Expiry dateDec 13, 2030

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/3083
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Methods for the controlled manufacture of high aspect ratio features. The method may include forming a layer stack on a top surface of a substrate and forming features in the layers of the layer stack. The high aspect ratio features may be defined using a resist layer that is patterned with a photolithographic condition. After removing at least one of the layers removed from the top of the layer stack, a feature dimension may be measured for features at different locations on the substrate. The method may further include changing the photolithographic condition based on the measured dimension and processing another substrate using the changed photolithographic condition.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.