Semiconductor laser device and method of manufacturing the same
US8193016B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 6, 2011 |
| Grant date | Jun 5, 2012 |
| Priority date | — |
| Expiry date | Jan 6, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2201
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser device includes a substrate and a semiconductor layer formed on a surface of the substrate and having a waveguide extending in a first direction parallel to the surface, wherein the waveguide is formed on a region approaching a first side from a center of the semiconductor laser device in a second direction parallel to the surface and intersecting with the first direction, a first region separated from the waveguide on a side opposite to the first side of the waveguide and extending parallel to the first direction and a first recess portion separated from the waveguide on an extension of a facet of the waveguide, intersecting with the first region and extending in the second direction are formed on an upper surface of the semiconductor laser device, and a thickness of the semiconductor layer on the first region is smaller than a thickness of the semiconductor layer on a region other than the first region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.