Post CMP planarization by cluster ION beam etch
US8193094B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 21, 2010 |
| Grant date | Jun 5, 2012 |
| Priority date | — |
| Expiry date | Oct 22, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3065
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The embodiments of mechanisms described enables improved planarity of substrates, which is crucial for patterning and device yield improvement. Chemical-mechanical polishing (CMP) is used to remove film to planarize the substrate before the final thickness is reached or before all removal film is polished. The substrate is then measured for its topography and film thickness. The topography and thickness data are used by the gas cluster ion beam (GCIB) etch tool to determine how much film to remove on a particular location. GCIB etch enables removal of final layer to meet the requirements of substrate uniformity and thickness target. The mechanisms enable improved planarity to meet the requirement of advanced processing technologies.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.