Plasma processing apparatus and impedance adjustment method
US8193097B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 14, 2009 |
| Grant date | Jun 5, 2012 |
| Priority date | — |
| Expiry date | Apr 5, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32082
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus, for performing a plasma processing on a substrate to be processed by generating a plasma of the processing gas in an evacuable processing chamber, includes an impedance adjusting mechanism. The impedance adjusting mechanism is provided with a resonance circuit formed to allow a radio frequency current to flow into the first electrode; a variable impedance unit installed on a power feed line to the first electrode; a detector for detecting an apparatus state to be used to search a resonance point of the resonance circuit; and a controller for searching a resonance point of the resonance circuit by detecting a signal of the apparatus state of the detector while varying a value of the variable impedance unit in a state where the plasma is formed and then adjusting the value of the variable impedance unit at the resonance point to a reference value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.