Silicon carbide semiconductor device including deep layer
US8193564B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 12, 2009 |
| Grant date | Jun 5, 2012 |
| Priority date | — |
| Expiry date | May 18, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/157
Abstract
A silicon carbide semiconductor device includes a substrate, a drift layer located on a first surface of the substrate, a base region located on the drift layer, a source region located on the base region, a trench penetrating the source region and the base region to the drift layer, a channel layer located in the trench, a gate insulating layer located on the channel layer, a gate electrode located on the gate insulating layer, a source electrode electrically coupled with the source region and the base region, a drain electrode located on a second surface of the substrate, and a deep layer. The deep layer is located under the base region, extends to a depth deeper than the trench and is formed along an approximately normal direction to a sidewall of the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.