Method for fabricating metal gate and polysilicon resistor and related polysilicon resistor structure
US8193900B2 · kind B2 · utility
6Cited by
2References
7Claims
0Family size
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Key dates
| Filing date | Jun 24, 2009 |
| Grant date | Jun 5, 2012 |
| Priority date | — |
| Expiry date | Aug 28, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/667
Abstract
An integrated method includes fabricating a metal gate and a polysilicon resistor structure. A photoresistor layer is defined by an SAB photo mask and covers a part of a polysilicon structure of the polysilicon resistor. When the gate conductor of a poly gate transistor is etched, the part of the polysilicon structure is protected by the patterned photoresistor layer. After the polysilicon resistor and the metal gate are formed. The polysilicon resistor still has sufficient resistance and includes two metal structures for electrical connection.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.