Creating mask data of integrated circuit patterns using calculated etching conversion difference
US8196071B2 · kind B2 · utility
0Cited by
7References
20Claims
0Family size
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Key dates
| Filing date | Jan 15, 2010 |
| Grant date | Jun 5, 2012 |
| Priority date | — |
| Expiry date | Oct 1, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/54
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A pattern data creating method comprising: referring to a first correspondence relation between an amount of dimension variation between a first pattern formed on a substrate and a second pattern formed by processing the substrate using the first pattern and either one of a pattern total surface area and a pattern boundary length of the first pattern; and creating pattern data for forming the first pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.